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1. product profile 1.1 general description combination of pnp low v cesat breakthrough in small signal (biss) transistor and n-channel trench metal-oxide semiconductor field- effect transistor (mosfet). the device is housed in a leadless medium po wer dfn2020-6 (sot1118) surface-mounted device (smd) plastic package. 1.2 features and benefits ? very low collector-emitte r saturation voltage v cesat ? high collector curr ent capability i c and i cm ? high energy efficiency due to less heat generation ? smaller required printed-circuit board (pcb) area than for conventional transistors 1.3 applications 1.4 quick reference data PBSM5240PFH 40 v, 2 a pnp low v cesat (biss) transistor with n-channel trench mosfet rev. 1 ? 20 june 2012 product data sheet ? load switch ? battery-driven devices ? power management ? charging circuits ? power switches (e.g. motors, fans) table 1. quick reference data symbol parameter conditions min typ max unit pnp low v cesat (biss) transistor v ceo collector-emitter voltage open base - - ? 40 v i c collector current [1] - ? 1.8 a i crm repetitive peak collector current [1] [5] --? 2a i cm peak collector current single pulse; t p ? 1ms [1] --? 3a r cesat collector-emitter saturation resistance i c = ? 500 ma; i b = ? 50 ma [2] - 240 340 m ?
PBSM5240PFH all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 20 june 2012 2 of 20 nxp semiconductors PBSM5240PFH 40 v, 2 a pnp biss/trench mosfet module [1] device mounted on an fr4 pcb, single-sided copper , tin-plated, mounting pad for collector 6 cm 2 . [2] pulse test: t p ? 300 ? s; ?? 0.02. [3] device mounted on an fr4 pcb, single-sided c opper, tin-plated, mounting pad for drain 1 cm 2 . [4] pulse test: t p ? 300 ? s; ?? 0.01. [5] pulse test: t p ? 20 ms; ?? 0.10. 2. pinning information 3. ordering information 4. marking n-channel trench mosfet v ds drain-source voltage t amb =25 ?c --30v v gs gate-source voltage t amb =25 ?c- - ? 8v i d drain current t amb =25 ?c; v gs =10v [3] --0.66a r dson drain-source on-state resistance t j =25 ?c; v gs =4.5v; i d =0.2a [4] - 370 580 m ? table 1. quick reference data ?continued symbol parameter conditions min typ max unit table 2. pinning pin description simplified outline graphic symbol 1emitter 2base 3drain 4source 5gate 6 collector 7 collector 8drain transparent top view 6 78 54 123 017aaa079 6, 7 5 4 1 2 3, 8 table 3. ordering information type number package name description version PBSM5240PFH dfn2020-6 plast ic thermal enhanced ul tra thin small outline package; no leads; 6 terminals; body 2 ? 2 ? 0.65 mm sot1118 table 4. marking code type number marking code PBSM5240PFH 1t
PBSM5240PFH all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 20 june 2012 3 of 20 nxp semiconductors PBSM5240PFH 40 v, 2 a pnp biss/trench mosfet module 5. limiting values [1] device mounted on an fr4 pcb, single-sided copper , tin-plated, mounting pad for collector 6 cm 2 . [2] device mounted on an fr4 pcb, 4-layer copper, tin-plated, mounting pad for collector 1 cm 2 [3] device mounted on an fr4 pcb, single-sided c opper, tin-plated, mounting pad for drain 1 cm 2 . [4] pulse test: t p ? 20 ms; ?? 0.10. table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit pnp low v cesat (biss) transistor v cbo collector-base voltage open emitter - ? 40 v v ceo collector-emitter voltage open base - ? 40 v v ebo emitter-base voltage open collector - ? 5v i c collector current [1] - ? 1.8 a i crm repetitive peak collector current [1] [4] - ? 2a i cm peak collector current single pulse; t p ? 1ms [1] - ? 3a i b base current [1] - ? 300 ma i bm peak base current single pulse; t p ? 1ms [1] - ? 1a p tot total power dissipation t amb ? 25 ?c [1] -1.1w [2] -1.25w n-channel trench mosfet v ds drain-source voltage t amb =25 ? c-3 0v v dg drain-gate voltage t amb =25 ?c; r gs =20k ? -30v v gs gate-source voltage t amb =25 ?c- ? 8v i d drain current v gs =10v [3] t amb =25 ?c - 660 ma t amb = 100 ? c - 420 ma i dm peak drain current t amb =25 ?c; single pulse; t p ? 10 ? s -3.56a p tot total power dissipation t amb =25 ?c [3] - 760 mw source-drain diode i s source current t amb =25 ?c - 660 ma per device t j junction temperature - 150 ?c t amb ambient temperature ? 55 +150 ?c t stg storage temperature ? 65 +150 ?c
PBSM5240PFH all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 20 june 2012 4 of 20 nxp semiconductors PBSM5240PFH 40 v, 2 a pnp biss/trench mosfet module (1) fr4 pcb, 4-layer copper, mounting pad for collector 1 cm 2 (2) fr4 pcb, single-sided copper, mounting pad for collector 6 cm 2 (3) fr4 pcb, single-sided copper, mounting pad for collector 1 cm 2 (4) fr4 pcb, single-sided copper, standard footprint fig 1. biss transistor: power derating curves fig 2. mosfet: normalized total power dissipation as a function of solder point temperature fig 3. mosfet: normalized continuous drain current as a function of sold er point temperature t amb (c) C75 175 125 25 75 C25 006aac608 1.4 p tot (w) 1.0 0.6 0.2 0.0 0.4 0.8 1.2 (2) (1) (3) (4) t sp (c) 0 200 150 50 100 03aa17 40 80 120 p der (%) 0 t sp (c) 0 200 150 50 100 03aa25 40 80 120 i der (%) 0 p der p tot p tot 25 ? c ?? ----------------------- - 100 % ? = i der i d i d25 ? c ?? ------------------- - 100 % ? =
PBSM5240PFH all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 20 june 2012 5 of 20 nxp semiconductors PBSM5240PFH 40 v, 2 a pnp biss/trench mosfet module i dm = single pulse (1) t p =1ms (2) dc; t sp =25 ? c (3) t p =10ms (4) t p = 100 ms (5) dc; t amb =25 ? c; drain mounting pad 1 cm 2 fig 4. mosfet: safe operating area; junction to ambien t; continuous and peak drain currents as a function of drain-source voltage 006aac609 v ds (v) 10 C1 10 2 10 1 1 10 C1 10 i d (a) 10 C2 (1) (2) (3) (4) (5) limit r dson = v ds /i d
PBSM5240PFH all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 20 june 2012 6 of 20 nxp semiconductors PBSM5240PFH 40 v, 2 a pnp biss/trench mosfet module 6. thermal characteristics [1] device mounted on an fr4 pcb, single-sided copper , tin-plated, mounting pad for collector 6 cm 2 . [2] device mounted on an fr4 pcb, 4-layer copper, tin-plated, mounting pad for collector 1 cm 2 . [3] device mounted on an fr4 pcb, single-sided c opper, tin-plated, mounting pad for drain 1 cm 2 . table 6. thermal characteristics symbol parameter conditions min typ max unit pnp low v cesat (biss) transistor r th(j-a) thermal resistance from junction to ambient in free air [1] --115k/w [2] --100k/w n-channel trench mosfet r th(j-a) thermal resistance from junction to ambient in free air [3] --165k/w fr4 pcb, single-sided copper, standard footprint fig 5. pnp transistor: transient thermal impedance from ju nction to ambient as a function of pulse duration; typical values 006aac610 10 C5 10 10 C2 10 C4 10 2 10 C1 t p (s) 10 C3 10 3 1 10 2 10 10 3 z th(j-a) (k/w) 1 0 duty cycle = 1 0.01 0.02 0.05 0.1 0.2 0.33 0.5 0.75
PBSM5240PFH all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 20 june 2012 7 of 20 nxp semiconductors PBSM5240PFH 40 v, 2 a pnp biss/trench mosfet module fr4 pcb, single-sided copper, mounting pad for collector 1 cm 2 fig 6. pnp transistor: transient thermal impedance from ju nction to ambient as a function of pulse duration; typical values fr4 pcb, single-sided copper, mounting pad for collector 6 cm 2 fig 7. pnp transistor: transient thermal impedance from ju nction to ambient as a function of pulse duration; typical values 006aac611 10 C5 10 10 C2 10 C4 10 2 10 C1 t p (s) 10 C3 10 3 1 10 2 10 10 3 z th(j-a) (k/w) 1 0 duty cycle = 1 0.01 0.02 0.05 0.1 0.2 0.33 0.5 0.75 006aac612 10 C5 10 10 C2 10 C4 10 2 10 C1 t p (s) 10 C3 10 3 1 10 2 10 10 3 z th(j-a) (k/w) 1 0 duty cycle = 1 0.01 0.02 0.05 0.1 0.2 0.33 0.5 0.75
PBSM5240PFH all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 20 june 2012 8 of 20 nxp semiconductors PBSM5240PFH 40 v, 2 a pnp biss/trench mosfet module fr4 pcb, 4-layer copper, mounting pad for collector 1 cm 2 fig 8. pnp transistor: transient thermal impedance from ju nction to ambient as a function of pulse duration; typical values fr4 pcb, single-sided copper, mounting pad for drain 1 cm 2 fig 9. mosfet: transient therma l impedance from junction to ambient as a function of pulse duration; typical values 006aac613 10 C5 10 10 C2 10 C4 10 2 10 C1 t p (s) 10 C3 10 3 1 10 2 10 10 3 z th(j-a) (k/w) 1 0 duty cycle = 1 0.01 0.02 0.05 0.1 0.2 0.33 0.5 0.75 006aac614 t p (s) 10 C3 10 2 10 3 10 1 10 C2 10 C1 10 2 10 10 3 z th(j-a) (k/w) 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0.01 0 duty cycle = 1
PBSM5240PFH all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 20 june 2012 9 of 20 nxp semiconductors PBSM5240PFH 40 v, 2 a pnp biss/trench mosfet module 7. characteristics [1] pulse test: t p ? 300 ? s; ?? 0.02. table 7. characteristics for pnp low v cesat transistor t amb =25 ? c unless otherwise specified. symbol parameter conditions min typ max unit i cbo collector-base cut-off current v cb = ? 30 v; i e =0a - - ? 100 na v cb = ? 30 v; i e =0a; t j =150 ?c --? 50 ? a i ces collector-emitter cut-off current v ce = ? 30 v; i b =0a - - ? 100 na i ebo emitter-base cut-off current v eb = ? 5v; i c =0a - - ? 100 na h fe dc current gain v ce = ? 5v [1] i c = ? 1 ma 100 - - i c = ? 100 ma 100 - - i c = ? 1a 75 - - v cesat collector-emitter saturation voltage i c = ? 100 ma; i b = ? 1ma [1] - ? 85 ? 140 mv i c = ? 500 ma; i b = ? 50 ma [1] - ? 120 ? 170 mv i c = ? 1a; i b = ? 100 ma [1] - ? 200 ? 310 mv r cesat collector-emitter saturation resistance i c = ? 500 ma; i b = ? 50 ma [1] - 240 340 m ? v besat base-emitter saturation voltage i c = ? 1a; i b = ? 100 ma [1] --? 1.1 v v beon base-emitter turn-on voltage v ce = ? 5v; i c = ? 1a [1] --? 1v f t transition frequency v ce = ? 10 v; i c = ? 50 ma; f=100mhz 100 - - mhz c c collector capacitance v cb = ? 10 v; i e =i e =0a; f=1mhz --15pf
PBSM5240PFH all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 20 june 2012 10 of 20 nxp semiconductors PBSM5240PFH 40 v, 2 a pnp biss/trench mosfet module v ce = ?5v (1) t amb = 100 ? c (2) t amb =25 ? c (3) t amb = ?55 ? c t amb =25 ? c fig 10. pnp transistor: dc current gain as a function of collector current; typical values fig 11. pnp transistor: collector current as a function of collector-emitter voltage; typical values v ce = ?5v (1) t amb = ?55 ? c (2) t amb =25 ? c (3) t amb = 100 ? c i c /i b =20 (1) t amb = ?55 ? c (2) t amb =25 ? c (3) t amb = 100 ? c fig 12. pnp transistor: base-emitter voltage as a function of collector current; typical values fig 13. pnp transistor: base-emitter saturation voltage as a function of collector current; typical values 006aac783 200 100 300 400 h fe 0 i c (ma) -10 -1 -10 3 -10 2 -1 -10 (1) (2) (3)
006aac615 C0.8 C0.4 C1.2 C1.6 v be (v) C0.0 i c (ma) C10 C1 C10 4 C10 3 C1 C10 2 C10 (2) (1) (3) 006aaa468 ?0.5 ?0.9 ?1.3 v besat (v) ?0.1 i c (ma) ?10 ?1 ?10 4 ?10 3 ?1 ?10 2 ?10 (2) (3) (1)
PBSM5240PFH all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 20 june 2012 11 of 20 nxp semiconductors PBSM5240PFH 40 v, 2 a pnp biss/trench mosfet module i c /i b =20 (1) t amb = 100 ? c (2) t amb =25 ? c (3) t amb = ?55 ? c t amb =25 ? c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 fig 14. pnp transistor: coll ector-emitter saturation voltage as a function of collector current; typical values fig 15. pnp transistor: coll ector-emitter saturation voltage as a function of collector current; typical values i c /i b =20 (1) t amb = 100 ? c (2) t amb =25 ? c (3) t amb = ?55 ? c t amb =25 ? c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 fig 16. pnp transistor: coll ector-emitter saturation resistance as a function of collector current; typical values fig 17. pnp transistor: coll ector-emitter saturation resistance as a function of collector current; typical values 006aaa466 i c (ma) ?10 ?1 ?10 4 ?10 3 ?1 ?10 2 ?10 ?10 ?1 ?1 v cesat (v) ?10 ?2 (3) (1) (2) 006aaa471 i c (ma) ?10 ?1 ?10 4 ?10 3 ?1 ?10 2 ?10 ?10 ?2 ?10 ?1 ?1 ?10 v cesat (v) ?10 ?3 (3) (2) (1) 006aaa470 i c (ma) ?10 ?1 ?10 4 ?10 3 ?1 ?10 2 ?10 1 10 10 2 10 3 r cesat () 10 ?1 (3) (1) (2) 006aaa472 i c (ma) ?10 ?1 ?10 4 ?10 3 ?1 ?10 2 ?10 1 10 10 2 10 3 r cesat () 10 ?1 (3) (2) (1)
PBSM5240PFH all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 20 june 2012 12 of 20 nxp semiconductors PBSM5240PFH 40 v, 2 a pnp biss/trench mosfet module [1] pulse test: t p ? 300 ? s; ?? 0.01. table 8. characteristics fo r n-channel trench mosfet t j =25 ? c unless otherwise specified. symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d =10 ? a; v gs =0v t j =25 ? c 30--v t j = ? 55 ? c 27--v v gs(th) gate-source threshold voltage i d =250 ? a; v ds =v gs t j =25 ?c 0.45 0.7 0.95 v t j = 150 ? c 0.25--v t j = ? 55 ? c --1.15v i dss drain leakage current v ds =30v; v gs =0v t j =25 ? c --1 ? a t j = 150 ?c - - 100 ? a i gss gate leakage current v gs = ? 8v; v ds =0v - 10 ? 100 na r dson drain-source on-state resistance v gs =4.5v; i d =0.2a [1] t j =25 ?c - 370 580 m ? t j = 150 ?c - 663 985 m ? v gs =2.5v; i d = 0.1 a - 440 690 m ? v gs =1.8v; i d = 75 ma - 540 920 m ? dynamic characteristics q g(tot) total gate charge i d =1a; v ds =15v; v gs =4.5v -0.89-nc q gs gate-source charge - 0.1 - nc q gd gate-drain charge - 0.2 - nc c iss input capacitance v gs =0v; v ds =25v; f=1mhz -43-pf c oss output capacitance - 7.7 - pf c rss reverse transfer capacitance -4.8-pf t d(on) turn-on delay time v ds =15v; r l =15 ? ; v gs =10v; r g =6 ? -4.0-ns t r rise time -7.5-ns t d(off) turn-off delay time - 18 - ns t f fall time - 4.5 - ns source-drain diode v sd source-drain voltage i s = 0.3 a; v gs = 0 v - 0.76 1.2 v
PBSM5240PFH all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 20 june 2012 13 of 20 nxp semiconductors PBSM5240PFH 40 v, 2 a pnp biss/trench mosfet module t j =25 ? ct j =25 ? c; v ds =5v fig 18. mosfet: output characteristics: drain current as a function of drain-source voltage; typical values fig 19. mosfet: subthreshold drain current as a function of gate-source voltage t j =25 ? c (1) v gs =1.8v (2) v gs =2.0v (3) v gs =2.5v (4) v gs =3.0v (5) v gs =4.5v v ds >i d ? r dson fig 20. mosfet: drain-source on-state resistance as a function of drain cu rrent; typical values fig 21. mosfet: transfer characteristics: drain current as a function of gate-source voltage; typical values 03an94 0 0.5 1 1.5 2 2.5 0 0.5 1 1.5 2 v ds (v) i d (a) 4.5 3 2.5 2 1.8 v gs (v) = 1.5 03am43 v gs (v) 0 1.2 0.8 0.4 10 ?4 10 ?5 10 ?3 i d (a) 10 ?6 min typ max i d (a) 0.0 2.5 2.0 1.0 1.5 0.5 006aac616 0.4 0.6 0.2 0.8 1.0 r dson () 0.0 (2) (1) (3) (4) (5) 03an96 0 0.5 1 1.5 2 2.5 01234 v gs (v) i d (a) t j = 150 c 25 c
PBSM5240PFH all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 20 june 2012 14 of 20 nxp semiconductors PBSM5240PFH 40 v, 2 a pnp biss/trench mosfet module i d =1ma; v ds =v gs fig 22. mosfet: normalized drain-source on-state resistance as a function of junction temperature; typical values fig 23. mosfet: gate-source threshold voltage as a function of junction temperature f=1mhz; v gs =0v fig 24. mosfet: input, output and reverse transfer capacitances as a function of drain-source voltage; typical values fig 25. mosfet: gate-source voltage as a function of gate charge; typical values t j (c) C60 180 120 060 006aac618 0.6 1.2 1.8 a 0.0 t j (c) ?60 180 120 060 03aj65 0.6 0.3 0.9 1.2 v gs(th) (v) 0 max min typ a r dson r dson 25 ? c ?? ----------------------------- = 03an98 1 10 10 2 10 -1 1 10 10 2 v ds (v) c (pf) c iss c oss c rss 03an99 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 q g (nc) v gs (v) i d = 1 a t j = 25 c v ds = 15 v
PBSM5240PFH all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 20 june 2012 15 of 20 nxp semiconductors PBSM5240PFH 40 v, 2 a pnp biss/trench mosfet module 8. package outline 9. packing information [1] for further information and the avai lability of packing methods, see section 13 . fig 26. mosfet: gate charge waveform definition s fig 27. mosfet: source current as a function of source-drain voltage; typical values 017aaa137 v gs v gs(th) q gs1 q gs2 q gd v ds q g(tot) i d q gs v gs(pl) v sd (v) 01 0.8 0.4 0.6 0.2 03an97 0.4 0.6 0.2 0.8 1 i s (a) 0 150 c t j = 25 c v gs = 0 v fig 28. package outline dfn2020-6 (sot1118) 10-05-31 dimensions in mm 0.04 max 0.65 max 0.77 0.57 (2) 0.54 0.44 (2) 2.1 1.9 2.1 1.9 1.1 0.9 0.3 0.2 0.65 (4) 0.35 0.25 (6) 4 3 1 6 table 9. packing methods the indicated -xxx are the last thre e digits of the 12nc ordering code. [1] type number package description packing quantity 3000 PBSM5240PFH dfn2020-6 (sot1118) 4 mm pitch, 8 mm tape and reel -115
PBSM5240PFH all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 20 june 2012 16 of 20 nxp semiconductors PBSM5240PFH 40 v, 2 a pnp biss/trench mosfet module 10. soldering fig 29. reflow soldering footprint dfn2020-6 (sot1118) sot1118_fr dimensions in mm solder paste solder resist occupied area solder lands 0.49 0.49 0.65 0.65 0.875 0.875 2.25 0.35 (6) 0.3 (6) 0.4 (6) 0.45 (6) 0.72 (2) 0.82 (2) 1.05 (2) 1.15 (2) 2.1
PBSM5240PFH all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 20 june 2012 17 of 20 nxp semiconductors PBSM5240PFH 40 v, 2 a pnp biss/trench mosfet module 11. revision history table 10. revision history document id release date data sheet status change notice supersedes PBSM5240PFH v.1 20120620 pr oduct data sheet - -
PBSM5240PFH all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 20 june 2012 18 of 20 nxp semiconductors PBSM5240PFH 40 v, 2 a pnp biss/trench mosfet module 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? 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stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
PBSM5240PFH all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 1 ? 20 june 2012 19 of 20 nxp semiconductors PBSM5240PFH 40 v, 2 a pnp biss/trench mosfet module export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comple te, exhaustive or legally binding. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. 12.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors PBSM5240PFH 40 v, 2 a pnp biss/trench mosfet module ? nxp b.v. 2012. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 20 june 2012 document identifier: PBSM5240PFH please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics . . . . . . . . . . . . . . . . . . 6 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 9 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 9 packing information . . . . . . . . . . . . . . . . . . . . 15 10 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 17 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 18 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 18 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 12.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19 13 contact information. . . . . . . . . . . . . . . . . . . . . 19 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

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